The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Mar. 16, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Chun-Hung Liao, Taichung, TW;

Jeng-Chi Lin, Hsinchu, TW;

Chi-Jen Liu, Taipei, TW;

Liang-Guang Chen, Hsinchu, TW;

Huang-Lin Chao, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); B24B 37/005 (2012.01);
U.S. Cl.
CPC ...
H01L 22/24 (2013.01); B24B 37/005 (2013.01);
Abstract

In-situ defect count detection in post chemical mechanical polishing (post-CMP) is provided. Post-CMP is performed, in-situ and according to a recipe, on a surface of a semiconductor wafer within a post-CMP chamber. A light signal is scanned over a target area of the surface of the semiconductor wafer and a reflected light signal reflected from the target area is detected. A defect count of defects present in the target area is determined based on the reflected light signal reflected from the target area.


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