The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
May. 25, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Wakako Ishida, Miyagi, JP;
Yasunori Hatamura, Miyagi, JP;
Eundo Bae, Hwaseong-si, KR;
Kazuya Kato, Miyagi, JP;
Inho Jang, Hwaseong-si, KR;
Eisuke Numazawa, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); B08B 7/0035 (2013.01); B08B 13/00 (2013.01); H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01L 21/31116 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/334 (2013.01);
Abstract
A substrate cleaning method includes: providing a substrate including a low-k layer containing silicon to a substrate support; etching the low-k layer by a plasma generated from a first gas; separating the etched substrate from the substrate support; and removing a reaction product attached to the substrate in the etching by a plasma generated from a second gas. The second gas includes a first carbon-containing gas represented by CHF(y≥0, x/z>¼).