Eisuke Numazawa

Title: Eisuke Numazawa: Innovator in Plasma Processing Technology

Introduction

Eisuke Numazawa is a notable inventor based in Miyagi, Japan. He has made significant contributions to the field of plasma processing technology, particularly in substrate cleaning methods. His innovative approach has led to advancements that are crucial for various applications in semiconductor manufacturing.

Latest Patents

Numazawa holds a patent for a cleaning method and plasma processing apparatus. This patent describes a substrate cleaning method that includes providing a substrate with a low-k layer containing silicon to a substrate support. The process involves etching the low-k layer using plasma generated from a first gas, separating the etched substrate from the support, and removing any reaction products attached to the substrate using plasma from a second gas. The second gas includes a first carbon-containing gas represented by CHF(y≥0, x/z>¼). This innovative method enhances the efficiency and effectiveness of substrate cleaning in semiconductor processes.

Career Highlights

Eisuke Numazawa is associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work at the company has positioned him as a key player in the development of advanced technologies that support the production of high-performance electronic devices.

Collaborations

Throughout his career, Numazawa has collaborated with esteemed colleagues, including Wakako Ishida and Yasunori Hatamura. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas, further enhancing the impact of their work in the field.

Conclusion

Eisuke Numazawa's contributions to plasma processing technology and substrate cleaning methods exemplify the importance of innovation in the semiconductor industry. His patent and collaborative efforts continue to influence advancements in manufacturing processes, showcasing his role as a significant inventor in this field.