The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Po-Lung Hung, Hsinchu, TW;
Yi-Tsang Hsieh, Hsinchu, TW;
Yu-Hsi Tang, Hsinchu, TW;
Chih-Ching Cheng, Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32697 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01); H01J 37/32082 (2013.01); H01J 2237/3343 (2013.01);
Abstract
A plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring.
Hung, Po-Lung. (2025). Dry etcher uniformity control by tuning edge zone plasma sheath (U.S. Patent No. 12334314). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12334314
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile