The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
May. 25, 2021
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Sagarika Mukesh, Albany, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Jingyun Zhang, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure may include one or more nanosheet field-effect transistors formed on a first portion of a substrate, and one or more fin field-effect transistors formed on a second portion of the substrate. A source drain of the one or more nanosheet field-effect transistors or a gate of the one or more nanosheet field-effect transistors may be separated from the substrate by an isolation layer. A source drain of the one or more fin field-effect transistors or a gate of the one or more fin field-effect transistors may be in direct contact with the substrate. The semiconductor structure may include a gate spacer surrounding the gate of the one or more nanosheet field-effect transistors and the gate of the one or more fin field-effect transistors.