The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Feb. 16, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Cheng Chen, New Taipei, TW;

Zhi-Chang Lin, Zhubei, TW;

Jung-Hung Chang, Changhua County, TW;

Chien-Ning Yao, Hsinchu, TW;

Tsung-Han Chuang, Tainan, TW;

Kuo-Cheng Chiang, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 86/01 (2025.01); H10D 87/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6706 (2025.01); H01L 21/76283 (2013.01); H10D 30/031 (2025.01); H10D 62/116 (2025.01); H10D 64/018 (2025.01); H10D 86/01 (2025.01); H10D 87/00 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and a bottom isolation feature formed over the substrate. The semiconductor structure also includes a bottom semiconductor layer formed over the bottom isolation feature and nanostructures formed over the bottom semiconductor layer. The semiconductor structure also includes a source/drain structure attached to the nanostructures and covering a portion of the bottom isolation feature.


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