The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Mar. 29, 2022
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Amir Avishai, Pleasanton, CA (US);
Alex Buxbaum, San Ramon, CA (US);
Eugen Foca, Ellwangen, DE;
Dmitry Klochkov, Schwaebisch Gmuend, DE;
Thomas Korb, Schwaebisch Gmuend, DE;
Keumsil Lee, Palo Alto, CA (US);
Assignee:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2005.12); G06T 7/00 (2016.12); H01J 37/22 (2005.12);
U.S. Cl.
CPC ...
H01L 21/67288 (2012.12); G06T 7/0004 (2012.12); G06T 7/0006 (2012.12); H01J 37/222 (2012.12); G06T 2207/10061 (2012.12); G06T 2207/10072 (2012.12); G06T 2207/30148 (2012.12); G06T 2207/30172 (2012.12); H01J 2237/2817 (2012.12);
Abstract
A 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer includes obtaining a 3D tomographic image, and selecting a plurality of 2D cross section images. The method also includes identifying contours of HAR structures, and extracting deviation parameters. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.