The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Jan. 15, 2024
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin P. O'Brien, Portland, OR (US);

Carl Naylor, Portland, OR (US);

Chelsey Dorow, Portland, OR (US);

Kirby Maxey, Hillsboro, OR (US);

Tanay Gosavi, Portland, OR (US);

Ashish Verma Penumatcha, Beaverton, OR (US);

Shriram Shivaraman, Hillsboro, OR (US);

Chia-Ching Lin, Portland, OR (US);

Sudarat Lee, Hillsboro, OR (US);

Uygar E. Avci, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2005.12); H01L 29/06 (2005.12); H01L 29/24 (2005.12); H01L 29/423 (2005.12); H01L 29/66 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7853 (2012.12); H01L 29/0673 (2012.12); H01L 29/24 (2012.12); H01L 29/42392 (2012.12); H01L 29/6653 (2012.12); H01L 29/6681 (2012.12); H01L 21/02568 (2012.12); H01L 21/0262 (2012.12);
Abstract

Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.


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