The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Dec. 07, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Junli Wang, Slingerlands, NY (US);

Dechao Guo, Niskayuna, NY (US);

Ruqiang Bao, Niskayuna, NY (US);

Rishikesh Krishnan, Cohoes, NY (US);

Balasubramanian S. Pranatharthiharan, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2005.12); H01L 21/02 (2005.12); H01L 21/28 (2005.12); H01L 21/822 (2005.12); H01L 21/8238 (2005.12); H01L 23/528 (2005.12); H01L 29/06 (2005.12); H01L 29/417 (2005.12); H01L 29/423 (2005.12); H01L 29/49 (2005.12); H01L 29/66 (2005.12); H01L 29/786 (2005.12);
U.S. Cl.
CPC ...
H01L 27/0922 (2012.12); H01L 21/0259 (2012.12); H01L 21/28088 (2012.12); H01L 21/8221 (2012.12); H01L 21/823807 (2012.12); H01L 21/823814 (2012.12); H01L 21/823842 (2012.12); H01L 21/823871 (2012.12); H01L 23/5286 (2012.12); H01L 29/0665 (2012.12); H01L 29/41733 (2012.12); H01L 29/42392 (2012.12); H01L 29/4908 (2012.12); H01L 29/66545 (2012.12); H01L 29/66553 (2012.12); H01L 29/66742 (2012.12); H01L 29/78696 (2012.12);
Abstract

A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a second work function metal. In the structure, the first work function metal is absent from an area including the second work function metal, and vice versa. Thus, no shared work functional metal is present in the semiconductor structure.


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