The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Nov. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shuen-Shin Liang, Hsinchu County, TW;

Pang-Yen Tsai, Jhu-bei, TW;

Keng-Chu Lin, Ping-Tung, TW;

Sung-Li Wang, Zhubei, TW;

Pinyen Lin, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); B82Y 40/00 (2011.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/0676 (2013.01); H01L 29/4238 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/7827 (2013.01); B82Y 40/00 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures, and the semiconductor nanostructures include a first semiconductor material. The semiconductor device structure also includes multiple epitaxial structures extending from edges of the semiconductor nanostructures. The epitaxial structures include a second semiconductor material that is different than the first semiconductor material. The semiconductor device structure further includes a gate stack wrapped around the semiconductor nanostructures.


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