The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

May. 25, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Naoki Shindo, Nirasaki, JP;

Gen You, Nirasaki, JP;

Haruna Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02019 (2013.01); H01L 21/31116 (2013.01); H01L 21/67063 (2013.01); H01L 21/68714 (2013.01);
Abstract

An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClFgas and a Ngas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClFgas to the Ngas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.


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