The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jul. 10, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
An-Hsuan Lee, Hsinchu, TW;
Ming-Shiuan She, Taoyuan, TW;
Chen-Hao Wu, Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Shen-Nan Lee, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method disclosed herein includes forming a polishing pad configured for a chemical-mechanical polishing (CMP) process and polishing a workpiece using the polishing pad and a CMP slurry. Forming the polishing pad includes forming an interpenetrating polymer network having a first phase and a second phase embedded in the first phase, removing the second phase from the interpenetrating polymer network, thereby forming a porous top pad that includes a network of pores embedded in the first phase, and adhering the porous top pad to a sub pad, thereby forming the polishing pad. The second phase is different from the first phase in composition, and the interpenetrating polymer network has a substantially periodic pattern. Surface roughness of the porous top pad is consistent during the polishing of the workpiece.