The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Feb. 23, 2021
Lam Research Corporation, Fremont, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Bhaskar Nagabhirava, Tigard, OR (US);
Phillip Friddle, Clifton Park, NY (US);
Ekimini Anuja De Silva, Slingerlands, NY (US);
Jennifer Church, Armonk, NY (US);
Dominik Metzler, Saratoga Springs, NY (US);
Nelson Felix, Slingerlands, NY (US);
Lam Research Corporation, Fremont, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Various embodiments herein relate to methods, apparatus, and systems that utilize a multi-layer hardmask in the context of patterning a semiconductor substrate using extreme ultraviolet photoresist. The multi-layer hardmask includes (1) an upper layer that includes a metal-containing material such as a metal oxide, a metal nitride, or a metal oxynitride, and (2) a lower layer that includes an inorganic dielectric silicon-containing material. Together, these layers of the multi-layer hardmask provide excellent etch selectivity and reduce formation of defects such as microbridges and line breaks. Certain embodiments relate to deposition of the multi-layer hardmask. Other embodiments relate to etching of the multi-layer hardmask. Some embodiments involve both deposition and etching of the multi-layer hardmask.