The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Sep. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Min-Hsuan Lu, Hsinchu, TW;
Kan-Ju Lin, Kaohsiung, TW;
Lin-Yu Huang, Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Hung-Yi Huang, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Chih-Hao Wang, Baoshan Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a semiconductor structure, a first conductive feature is formed in a trench by PVD and a glue layer is then deposited on the first conductive feature in the trench before CVD deposition of a second conductive feature there-over. The first conductive feature acts as a protection layer to keep silicide from being damaged by later deposition of metal or a precursor by CVD. The glue layer extends along the extent of the sidewall to enhance the adhesion of the second conductive features to the surrounding dielectric layer.