The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Apr. 21, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Petro Deminskyi, Helsinki, FI;

Charles Dezelah, Helsinki, FI;

Jiyeon Kim, Phoenix, AZ (US);

Giuseppe Alessio Verni, Ottignies, BE;

Maart Van Druenen, Helsinki, FI;

Qi Xie, Wilsele, BE;

Petri Räisänen, Gilbert, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); C23C 16/38 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/38 (2013.01); C23C 16/45525 (2013.01); C23C 16/50 (2013.01); H01L 29/4966 (2013.01);
Abstract

Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.


Find Patent Forward Citations

Loading…