The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

May. 18, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Sema Ermez, Santa Clara, CA (US);

Ruopeng Deng, San Jose, CA (US);

Yutaka Nishioka, Saijo-cho, JP;

Xiaolan Ba, Fremont, CA (US);

Sanjay Gopinath, Fremont, CA (US);

Michal Danek, Cupertino, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); C23C 16/08 (2013.01); C23C 16/45525 (2013.01); H01L 21/28568 (2013.01);
Abstract

Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.


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