The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jul. 24, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Tai-I Yang, Hsinchu, TW;

Wei-Chen Chu, Taichung, TW;

Yung-Chih Wang, Taoyuan, TW;

Chia-Tien Wu, Taichung, TW;

Hsin-Ping Chen, Hsinchu County, TW;

Shau-Lin Shue, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/31144 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.


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