The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
May. 08, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Han-Yu Lin, Hsinchu, TW;
Yi-Ruei Jhan, Keelung, TW;
Fang-Wei Lee, Hsinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Chao-Hsien Huang, Tainan, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Akira Mineji, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion embedded in the isolation layer, and a gate structure over top and sidewall surfaces of the semiconductor fin and the dielectric fin. The semiconductor fin has a first sidewall and a second sidewall facing away from the first sidewall. The isolation layer includes a first portion disposed on the first sidewall of the semiconductor fin and a second portion disposed on the second sidewall of the semiconductor fin. A top portion of the dielectric fin includes an air pocket with a top opening sealed by the gate structure.