The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Apr. 13, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks; and forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench. By using the method, a problem that a photoresist peels off during etching due to an elongated shape when separated mandrel lines are directly formed can be avoided. Further, a problem of a relatively high requirement on a filling material when the mandrel lines are formed directly by using a plurality of photolithography processes can be avoided, to lower the requirement on the filling material.