The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Sep. 01, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shih-Hao Lin, Hsinchu, TW;
Chih-Hsiang Huang, Hsinchu County, TW;
Shang-Rong Li, Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Jui-Lin Chen, Taipei, TW;
Ming-Shuan Li, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a capping layer over the first and the second fin, forming a dummy gate stack over the capping layer, forming source/drain (S/D) features in the first and the second fin, removing the dummy gate stack to form a gate trench, removing the first sacrificial layers and the capping layer over the first fin to form first gaps, removing the capping layer over the second fin and portions of the second sacrificial layers to from second gaps, where remaining portions of the second sacrificial layers and the capping layers form a threshold voltage (V) modulation layer, and forming a metal gate stack in the gate trench, the first gaps, and the second gaps.