The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Dec. 18, 2020
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Weiming Ren, San Jose, CA (US);

Zizhou Gong, San Jose, CA (US);

Xuerang Hu, San Jose, CA (US);

Xuedong Liu, San Jose, CA (US);

Zhong-wei Chen, San Jose, CA (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/141 (2006.01); H01J 37/147 (2006.01); H01J 37/20 (2006.01); H01J 37/244 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3177 (2013.01); H01J 37/141 (2013.01); H01J 37/1474 (2013.01); H01J 37/20 (2013.01); H01J 37/244 (2013.01); H01J 37/28 (2013.01); H01J 2237/049 (2013.01); H01J 2237/1532 (2013.01); H01J 2237/20207 (2013.01); H01J 2237/2446 (2013.01); H01J 2237/2448 (2013.01);
Abstract

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.


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