The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Jan. 05, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hitoshi Kato, Iwate, JP;
Toru Ishii, Iwate, JP;
Yuji Seshimo, Yamanashi, JP;
Yuichiro Sase, Iwate, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/4584 (2013.01); C23C 16/56 (2013.01); H01J 37/32724 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/332 (2013.01); H01J 2237/338 (2013.01);
Abstract
A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.