The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jun. 24, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Han-Yu Lin, Nantou County, TW;
Li-Te Lin, Hsinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Yi-Lun Chen, Taichung, TW;
Jung-Hao Chang, Taichung, TW;
Yi-Chen Lo, Hsinchu County, TW;
Fo-Ju Lin, Keelung, TW;
Kenichi Sano, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material is received. A plurality of first main etches are performed to the semiconductor structure for a plurality of first durations under the first etching chemistry. A plurality of pumping operations are performed for a plurality of pumping durations, each of the pumping operations being prior to each of the first main etches. Each of the first durations is in a range of from about 1 second to about 2.5 seconds.