The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Sep. 29, 2020
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Yasuhiro Shirasaki, Tokyo, JP;

Natsuki Tsuno, Tokyo, JP;

Minami Shouji, Tokyo, JP;

Makoto Sakakibara, Tokyo, JP;

Satoshi Takada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/265 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); G01R 31/307 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2653 (2013.01); G01R 31/26 (2013.01); G01R 31/2851 (2013.01); G01R 31/28 (2013.01); G01R 31/307 (2013.01);
Abstract

A semiconductor inspection devicehaving a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetectorconfigured to detect signal light; a control unitconfigured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.


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