The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Apr. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Chung-Wei Hsu, Hsinchu County, TW;
Lung-Kun Chu, New Taipei, TW;
Jia-Ni Yu, New Taipei, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Mao-Lin Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a plurality of first semiconductor nanostructures formed over a substrate, and a first S/D structure formed on sidewall surfaces of the first semiconductor nanostructures. The semiconductor device includes a plurality of second semiconductor nanostructures formed over the substrate, and a second S/D structure formed on sidewall surfaces of the second semiconductor nanostructures. The semiconductor device includes an isolation structure formed between the first S/D structure and the second S/D structure, and the isolation structure has a first sidewall surface in direct contact with the first S/D structure and a second sidewall surface in direct contact with the second S/D structure.