The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jul. 18, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Che-Chang Hsu, Taichung, TW;
Sheng-Kang Yu, Hsinchu, TW;
Shang-Chieh Chien, New Taipei, TW;
Li-Jui Chen, Hsinchu, TW;
Heng-Hsin Liu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.