The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jun. 06, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Curtis S. Durfee, Schenectady, NY (US);
Jay William Strane, Warwick, NY (US);
Min Gyu Sung, Latham, NY (US);
Julien Frougier, Albany, NY (US);
Chanro Park, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Provided is a stacked field-effect transistor (FET). The stacked FET comprises a top device, a bottom device, and a transition region between the top device and the bottom device. The transition region includes a plurality of inner spacers and a first inter-layer dielectric (ILD). The ILD is formed between each of the plurality of inner spacers. The top and bottom devices have a first channel sheet thickness in a gate region and a second channel sheet thickness between inner spacers. The second channel sheet thickness is larger than both the first channel sheet thickness and the first distance.