The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jul. 24, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Lung-Kun Chu, New Taipei, TW;
Mao-Lin Huang, Hsinchu, TW;
Chung-Wei Hsu, Hsinchu, TW;
Jia-Ni Yu, New Taipei, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure, along with methods of forming such, are described. The structure includes first and second dielectric features and a first semiconductor layer disposed between the first and second dielectric features. The structure further includes an isolation layer disposed between the first and second dielectric features, and the isolation layer is in contact with the first and second dielectric features. The first semiconductor layer is disposed over the isolation layer. The structure further includes a gate dielectric layer disposed over the isolation layer and a gate electrode layer disposed over the gate dielectric layer. The gate electrode layer has an end extending to a level between a first plane defined by a first surface of the first semiconductor layer and a second plane defined by a second surface opposite the first surface.