The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jun. 26, 2020
Intel Corporation, Santa Clara, CA (US);
Kevin O'Brien, Portland, OR (US);
Chelsey Dorow, Portland, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Carl Naylor, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Tanay Gosavi, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Ashish Verma Penumatcha, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source material coupled to a first end of the first and second channel layers, a drain material coupled to a second end of the first and second channel layers, a gate electrode between the source material and the drain material, and between the first channel layer and the second channel layer and a gate dielectric between the gate electrode and each of the first channel layer and the second channel layer.