The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Jan. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Yu Lo, Zhongli, TW;

Chin-Shen Lin, Taipei, TW;

Chi-Yu Lu, New Taipei, TW;

Kuo-Nan Yang, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chung-Hsing Wang, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/50 (2006.01); H01L 27/088 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/50 (2013.01); H01L 27/088 (2013.01); H01L 27/11803 (2013.01);
Abstract

Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate, a power switch, a first power mesh and a second power mesh. The power switch is formed over the front surface of the semiconductor substrate. The first power mesh is formed over the power switch and is directly connected to the first terminal of the power switch. The second power mesh is formed over the back surface of the semiconductor substrate and is directly connected to the second terminal of the power switch.


Find Patent Forward Citations

Loading…