The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Sep. 25, 2020
Intel Corporation, Santa Clara, CA (US);
Kevin Cook, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Nazila Haratipour, Hillsboro, OR (US);
Ralph Thomas Troeger, Portland, OR (US);
Christopher J. Jezewski, Portland, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include complementary metal-oxide-semiconductor (CMOS) devices and methods of forming CMOS devices. In an embodiment, a CMOS device comprises a first transistor with a first conductivity type, where the first transistor comprises a first source region and a first drain region, and a first metal over the first source region and the first drain region. In an embodiment, the CMOS device further comprises a second transistor with a second conductivity type opposite form the first conductivity type, where the second transistor comprises a second source region and a second drain region, a second metal over the second source region and the second drain region, and the first metal over the second metal.