The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Mar. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shin-Puu Jeng, Hsinchu, TW;

Techi Wong, Zhubei, TW;

Po-Yao Chuang, Hsinchu, TW;

Shuo-Mao Chen, New Taipei, TW;

Meng-Wei Chou, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 27/01 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3142 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 27/01 (2013.01); H01L 28/90 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01);
Abstract

An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.


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