The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Apr. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ken-Yu Chang, Hsinchu, TW;
Chun-I Tsai, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Wei-Jung Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/67075 (2013.01); H01L 21/76877 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 29/66545 (2013.01);
Abstract
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.