The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Jun. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Lung Hung, Baoshan Township, TW;

Yi-Tsang Hsieh, Hsinchu, TW;

Yu-Hsi Tang, Yunlin County, TW;

Chih-Teng Liao, Hsinchu, TW;

Chih-Ching Cheng, Xizhou Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/32449 (2013.01); H01J 37/32972 (2013.01); H01L 21/67253 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/334 (2013.01);
Abstract

In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.


Find Patent Forward Citations

Hung, Po-Lung. (2024). Small gas flow monitoring of dry etcher by oes signal (U.S. Patent No. 12142494). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12142494

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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