The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
May. 12, 2022
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Hsing-Chen Wu, Hsinchu, TW;
Min-Chieh Yang, Hsinchu, TW;
Ming-Chi Liao, Billerica, MA (US);
Wen Hua Tai, Hsinchu, TW;
Wei-Ling Lan, Hsinchu, TW;
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); H01L 21/0217 (2013.01); H01L 21/30604 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01); H01L 21/32134 (2013.01);
Abstract
The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.