The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jun. 29, 2020
Intel Corporation, Santa Clara, CA (US);
Chelsey Dorow, Portland, OR (US);
Kevin O'Brien, Portland, OR (US);
Carl Naylor, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Ashish Verma Penumatcha, Hillsboro, OR (US);
Chia-Ching Lin, Portland, OR (US);
Tanay Gosavi, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Kirby Maxey, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor includes a channel including a first layer including a first monocrystalline transition metal dichalcogenide (TMD) material, where the first layer is stoichiometric and includes a first transition metal. The channel further includes a second layer above the first layer, the second layer including a second monocrystalline TMD material, where the second monocrystalline TMD material includes a second transition metal and oxygen, and where the second layer is sub-stoichiometric. The transistor further includes a gate electrode above a first portion of the channel layer, a gate dielectric layer between the channel layer and the gate electrode, a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate electrode is between drain contact and the source contact.