The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Dec. 19, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Mao-Lin Huang, Hsinchu, TW;
Lung-Kun Chu, New Taipei, TW;
Chung-Wei Hsu, Hsinchu County, TW;
Jia-Ni Yu, New Taipei, TW;
Chun-Fu Lu, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a gate dielectric layer, a first conductive layer over the first conductive layer. The gate structure includes a fill layer over the first conductive layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a top surface of the gate dielectric layer is lower than a top surface of the protection layer and higher than a top surface of the first conductive layer.