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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12119341 B1

PDFFull Text
Date of Patent:
Oct. 15, 2024

Filed:

Sep. 27, 2021

Electrostatic discharge diode having dielectric isolation layer

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huimei Zhou, Albany, NY (US);

Julien Frougier, Albany, NY (US);

Xuefeng Liu, Schenectady, NY (US);

Jingyun Zhang, Albany, NY (US);

Lan Yu, Voorheesville, NY (US);

Heng Wu, Guilderland, NY (US);

Miaomiao Wang, Albany, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Samuel Waldbaum

Ryan, Mason & Lewis, LLP

Primary Examiner:

Mohammed Shamsuzzaman

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

In one embodiment a semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.

Find Patent Forward Citations

Zhou, Huimei. (2024). Electrostatic discharge diode having dielectric isolation layer (U.S. Patent No. 12119341). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12119341

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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