The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Jul. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yen-Shuo Su, Hsinchu, TW;

Jen-Hao Yeh, Hsinchu, TW;

Jhan-Hong Yeh, Hsinchu, TW;

Ting-Ya Cheng, Hsinchu, TW;

Henry Yee Shian Tong, Hsinchu, TW;

Chun-Lin Chang, Hsinchu, TW;

Han-Lung Chang, Hsinchu, TW;

Li-Jui Chen, Hsinchu, TW;

Po-Chung Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); G01V 8/12 (2006.01);
U.S. Cl.
CPC ...
H05G 2/008 (2013.01); G01V 8/12 (2013.01); H05G 2/005 (2013.01);
Abstract

A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.


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