The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Sep. 30, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Julien Frougier, Albany, NY (US);

Huimei Zhou, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Chanro Park, Clifton Park, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/82385 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01);
Abstract

Semiconductor devices and methods of forming the same include a first device region, a second device region, and an inter-device dielectric spacer between the first device region and the second device region. The first device region includes a first device channel, a first-polarity work function metal layer on the first device channel, and a second-polarity work function metal layer on the first device channel. The second device region include a second device channel, and a second-polarity work function metal layer on the second device channel.


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