The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 05, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Xi Cen, San Jose, CA (US);
Kai Wu, Palo Alto, CA (US);
Min Heon, Los Gatos, CA (US);
Wei Min Chan, Sunnyvale, CA (US);
Tom Ho Wing Yu, Campbell, CA (US);
Peiqi Wang, Campbell, CA (US);
Ju Ik Kang, Seoul, KR;
Feihu Wang, San Jose, CA (US);
Nobuyuki Sasaki, Cupertino, CA (US);
Chunming Zhou, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.