Sunnyvale, CA, United States of America

Wei Min Chan

This inventor holds 4 USPTO granted patents and 4 published patent applications. Top assignees: Applied Materials, Inc., Leland Stanford Junior University. Active years: 2012-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Min Chan. Retrieved from https://idiyas.com/inventor/wei-min-chan-4n09o8r8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 6.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012-2024

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4 patents (USPTO):Explore Patents

Title: Innovations of Wei Min Chan: Pioneering Tungsten Gap Fill Methods

Introduction

Wei Min Chan is a distinguished inventor based in Sunnyvale, California, who has contributed significantly to the field of semiconductor manufacturing. With four patents to his name, Chan's work revolves around advanced methods for tungsten gap fill, enhancing the efficiency and reliability of high aspect ratio structures.

Latest Patents

Chan's latest patents focus on innovative methods for achieving low resistivity and stress tungsten gap fill. One such patent outlines a technique for forming tungsten on a structure, which includes depositing a tungsten liner via a physical vapor deposition (PVD) process. This process utilizes high ionization and ambient gases such as argon or krypton, conducted at temperatures ranging from approximately 20 degrees Celsius to 300 degrees Celsius. Following the liner deposition, the method incorporates a nitridation process and subsequently deposits bulk tungsten through a chemical vapor deposition (CVD) process. This CVD is performed at temperatures between 300 degrees Celsius and 500 degrees Celsius, under pressures of 5 Torr to 300 Torr, allowing for the formation of a seam suppressed, boron-free tungsten fill. Chan's specialized techniques address the challenges posed by high aspect ratio structures, affirming his expertise in semiconductor technologies.

Career Highlights

Throughout his career, Wei Min Chan has collaborated with prominent companies and research institutions, notably Applied Materials, Inc. and Leland Stanford Junior University. His experience in these organizations has not only enriched his knowledge but has also facilitated the development of groundbreaking innovations in semiconductor manufacturing.

Collaborations

Chan has worked alongside notable colleagues such as Xi Cen and Kai Wu. Their collaborative efforts have driven advancements in technology, focusing particularly on improving tungsten gap fill methods, which are crucial for modern semiconductor applications.

Conclusion

Wei Min Chan’s innovative work in tungsten gap fill techniques demonstrates his significant contribution to the semiconductor industry. His patents not only address critical manufacturing challenges but also pave the way for future advancements in electronic devices. As technology continues to evolve, Chan's expertise and inventions will undoubtedly play a vital role in shaping the landscape of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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