The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Wei-Liang Chen, Tainan, TW;
Cheng-Hsien Chen, Tainan, TW;
Yu-Lung Yeh, Kaohsiung, TW;
Chuang Chihchous, Fongshan, TW;
Yen-Hsiu Chen, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 29/0847 (2013.01);
Abstract
A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.