The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Feb. 10, 2022
Lam Research Corporation, Fremont, CA (US);
Jengyi Yu, San Ramon, CA (US);
Samantha S. H. Tan, Newark, CA (US);
Yu Jiang, Sunnyvale, CA (US);
Hui-Jung Wu, Pleasanton, CA (US);
Richard Wise, Los Gatos, CA (US);
Yang Pan, Los Altos, CA (US);
Nader Shamma, Cupertino, CA (US);
Boris Volosskiy, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes Hand a hydrocarbon.