The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Aug. 25, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Xiaodong Wang, San Jose, CA (US);
Joung Joo Lee, San Jose, CA (US);
Fuhong Zhang, Cupertino, CA (US);
Martin Lee Riker, Milpitas, CA (US);
Keith A. Miller, Mountain View, CA (US);
William Fruchterman, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
Adolph Miller Allen, Oakland, CA (US);
Shouyin Zhang, Livermore, CA (US);
Xianmin Tang, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.