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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12087819 B1

PDFFull Text
Date of Patent:
Sep. 10, 2024

Filed:

Jul. 22, 2022

Dual channel structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Mrunal Abhijith Khaderbad, Hsinchu, TW;

Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;

Keng-Chu Lin, Hsinchu, TW;

Tzer-Min Shen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1037 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a channel member including a first channel layer and a second channel layer over the first channel layer, and a gate structure over the channel member. The first channel layer includes silicon, germanium, a III-V semiconductor, or a II-VI semiconductor and the second channel layer includes a two-dimensional material.

Find Patent Forward Citations

Khaderbad, Mrunal. (2024). Dual channel structure (U.S. Patent No. 12087819). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12087819

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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