The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Dec. 17, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Gurpreet Singh, Portland, OR (US);

Eungnak Han, Portland, OR (US);

Manish Chandhok, Beaverton, OR (US);

Richard E Schenker, Portland, OR (US);

Florian Gstrein, Portland, OR (US);

Paul A. Nyhus, Portland, OR (US);

Charles Henry Wallace, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/76811 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01);
Abstract

Disclosed herein are colored gratings in microelectronic structures. For example, a microelectronic structure may include first conductive structures alternating with second conductive structures, wherein individual ones of the first conductive structures include a bottom portion and a top portion, individual cap structures are on individual ones of the second conductive structures, the bottom portions of the first conductive structures are laterally spaced apart from and aligned with the second conductive structures, and the top portions of the first conductive structures are laterally spaced apart from and aligned with the cap structures. In some embodiments, a microelectronic structure may include one or more unordered lamellar regions laterally spaced apart from and aligned with the first conductive structures.


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