The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shih-Hao Lin, Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Hsin-Wen Su, Hsinchu, TW;
Jing-Yi Lin, Hsinchu, TW;
Shang-Rong Li, Hsinchu, TW;
Chong-De Lien, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a stack of semiconductor layers disposed over a protruding portion of a substrate, isolation features disposed over the substrate, wherein a top surface of the protruding portion of the substrate is separated from a bottom surface of the isolation features by a first distance, a metal gate stack interleaved with the stack of semiconductor layers, where a bottom portion of the metal gate stack is disposed on sidewalls of the protruding portion of the substrate and where thickness of the bottom portion of the metal gate stack is defined by a second distance that is less than the first distance, and epitaxial source/drain features disposed adjacent to the metal gate stack.