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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12080763 B1

PDFFull Text
Date of Patent:
Sep. 03, 2024

Filed:

May. 26, 2022

Silicide for group iii-nitride devices and methods of fabrication

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sansaptak Dasgupta, Hillsboro, OR (US);

Marko Radosavljevic, Portland, OR (US);

Han Wui Then, Portland, OR (US);

Paul Fischer, Portland, OR (US);

Walid Hafez, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Essential Patents Group, LLP

Primary Examiner:

Robert G Bachner

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/033 (2006.01); H01L 21/285 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0337 (2013.01); H01L 21/28575 (2013.01); H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/778 (2013.01);
Abstract

A transistor includes a polarization layer above a channel layer including a first III-Nitride (III-N) material, a gate electrode above the polarization layer, a source structure and a drain structure on opposite sides of the gate electrode, where the source structure and a drain structure each include a second III-N material. The transistor further includes a silicide on at least a portion of the source structure or the drain structure. A contact is coupled through the silicide to the source or drain structure.

Find Patent Forward Citations

Dasgupta, Sansaptak. (2024). Silicide for group iii-nitride devices and methods of fabrication (U.S. Patent No. 12080763). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12080763

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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