The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jun. 25, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Feras Eid, Chandler, AZ (US);

Xavier Brun, Hillsboro, OR (US);

Paul Diglio, Gaston, OR (US);

Joe Walczyk, Tigard, OR (US);

Sergio Antonio Chan Arguedas, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); B33Y 70/00 (2020.01); B33Y 80/00 (2015.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); B33Y 70/00 (2014.12); B33Y 80/00 (2014.12);
Abstract

An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a backside metallization layer on the backside surface of the integrated circuit device, wherein the backside metallization layer comprises a bond layer on the backside surface of the integrated circuit device, a high thermal conductivity layer on the bond layer, and a cap layer on the high thermal conductivity layer. The bond layer may be a layered stack comprising an adhesion promotion layer on the backside of the integrated circuit device and at one least metal layer. The high thermal conductivity layer may be an additively deposited material having a thermal conductivity greater than silicon, such as copper, silver, aluminum, diamond, silicon carbide, boron nitride, aluminum nitride, and combinations thereof.


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